the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1998, 1999 mos field effect transistor 2SK3105 n-channel mos field effect transistor for switching data sheet document no. d13293ej1v0ds00 (1st edition) date published june 1999 ns cp(k) printed in japan description the 2SK3105 is a switching device which can be driven directly by a 4 v power source. the 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features can be driven by a 4 v power source low on-state resistance r ds(on)1 = 95 m w max. (v gs = 10 v, i d = 1.5 a) r ds(on)2 = 135 m w max. (v gs = 4.5 v, i d = 1.5 a) r ds(on)3 = 150 m w max. (v gs = 4.0 v, i d = 1.5 a) ordering information part number package 2SK3105 3-pin mini mold (thin type) absolute maximum ratings (t a = 25c) drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current (dc) i d(dc) 2.5 a drain current (pulse) note1 i d(pulse) 10 a total power dissipation p t1 0.2 w total power dissipation note2 p t2 1.25 w channel temperature t ch 150 c storage temperature t stg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. mounted on fr4 board, t 5 sec. remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 C0.06 2.8 0.2 1.5 0.95 1 2 3 1.9 2.9 0.2 0.4 +0.1 C0.05 0.95 0.65 +0.1 C0.15 1 : gate 2 : source 3 : drain equivalent circuit source body diode gate protection diode marking: xa gate drain
data sheet d13293ej1v0ds00 2 2SK3105 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain cut-off current i dss v ds = 30 v, v gs = 0 v C10 m a gate leakage current i gss v gs = 16 v, v ds = 0 v 10 m a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.0 1.6 2.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 1.5 a13.5s drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 1.5 a5695m w r ds(on)2 v gs = 4.5 v, i d = 1.5 a 82 135 m w r ds(on)3 v gs = 4.0 v, i d = 1.5 a 91 150 m w input capacitance c iss v ds = 10 v 211 pf output capacitance c oss v gs = 0 v95pf reverse transfer capacitance c rss f = 1 mhz 42 pf turn-on delay time t d(on) v dd = 10 v12ns rise time t r i d = 1.0 a44ns turn-off delay time t d(off) v gs(on) = 10 v28ns fall time t f r g = 10 w 15 ns total gate charge q g v ds = 10 v2.1nc gate to source charge q gs i d = 2.5 a0.61nc gate to drain charge q gd v gs = 4.0 v0.84nc diode forward voltage v f(s-d) i f = 2.5 a, v gs = 0 v0.81v reverse recovery time t rr i f = 2.5 a, v gs = 0 v15ns reverse recovery charge q rr di/dt = 90 a / m s3.7nc test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd t = 1 s m duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % t r g = 10 w i d 0 t on t off pg. 50 w d.u.t. r l v dd i g = 2 ma
data sheet d13293ej1v0ds00 3 2SK3105 typical characteristics (t a = 25c) 30 150 60 90 20 60 80 40 0 100 120 derating factor of forward bias safe operating area dt - derating factor - % t a - ambient temperature - ?c forward bias safe operating area 10 100 i d - drain current - a 1 v ds - drain to source voltage - v 100 10 1 0.1 0.1 0.01 5 s 100 ms 10 ms pw = 1 ms r ds(on) limited (@v gs = 10 v) i d (pulse) i d ( dc ) single pulse mounted on fr-4 board of 50mm x 50mm x 1.6mm 0.01 0.001 0.0001 0.00001 1 0 2 34 5 10 1 0.1 v gs - gate to sorce voltage - v - 25?c 25?c t a = 125?c 75?c v ds = 10 v transfer characteristics i d - drain current - a gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cut-off voltage - v v ds = 10 v i d = 1 ma - 50 50 100 0 150 2.0 1.6 1.8 1.4 1.2 1.0 1 10 0.1 v ds = 10v i d - drain current - a | y fs | - forward transfer admittance - s 1 10 0.1 0.01 0.01 100 25 ?c t a = - 25 ?c 125 ?c 75 ?c forward transfer admmittance vs. drain current drain to source on-state resistance vs. drain current 1 0.1 0.01 10 i d - drain current - a r ds(on) - drain to source on-state resistance - m w 100 50 150 t a = 125 ?c 75 ?c - 25 ?c 25 ?c v gs = 4.0 v
data sheet d13293ej1v0ds00 4 2SK3105 drain to source on-state resistance vs. drain current 1 0.1 0.01 10 i d - drain current - a r ds(on) - drain to source on-state resistance - m w 100 50 150 t a = 125 ?c 75 ?c - 25 ?c 25 ?c v gs = 4.5 v drain to source on-state resistance vs. drain current 1 0.1 0.01 10 i d - drain current - a r ds(on) - drain to source on-state resistance - m w 50 0 100 t a = 125 ?c 75 ?c - 25 ?c 25 ?c v gs = 10 v drain to source on-state resistance vs. channel temperature t ch - channel temperature -?c i d = 1.5 a - 50 0 0 50 100 150 50 150 100 r ds (on) - drain to source on-state resistance - m w 10 v v gs = 4.0 v 4.5 v 0 0 200 150 100 50 4 8 12 16 20 r ds (on) - drain to source on-state resistance - m w v gs - gate to source voltage - v i d = 1.5 a drain to source on-state resistance vs. gate to source voltage capacitance vs. drain to source voltage v ds - drain to source voltage - v ciss, coss, crss - capacitance - pf 10 100 1000 1 10 100 f = 1 mhz v gs = 0v c iss c rss c oss 0.1 1 10 i d - drain current - a td (on) , tr, td (off) , tf - swwitchig time - ns 100 10 1 switching characteristics v dd = 10v v gs ( on ) = 10v r g = 10 w tf td (off) td (on) tr
data sheet d13293ej1v0ds00 5 2SK3105 0.01 0.1 1 10 0.4 0.6 0.8 1.0 1.2 source to drain diode forward voltage i f - source to drain current - a v f(s-d) - source to drain voltage - v q g - gate charge - nc 0 135 4 2 dynamic input characteristics v gs - gate to source voltage - v 0 4 2 6 8 10 v dd = 10 v 6.0 v i d = 2.5 a transient thermal resistance vs. pulse width pw - pulse width - s r th(ch-a) - transient thermal resistance - ?c/w 10 1 100 1000 1 0.001 0.01 0.1 10 100 1000 single pulse without board mounted on 250 mm x 35 m copper pad connected to drain electrode in 50 mm x 50 mm x 1.6 mm fr-4 board m 2
data sheet d13293ej1v0ds00 6 2SK3105 [memo]
data sheet d13293ej1v0ds00 7 2SK3105 [memo]
2SK3105 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8
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